WU Bo, DENG Jun, YANG Li-peng, TIAN Ying, HAN Jun, LI Jian-jun, SHI Yan-li. The Influences of Contact Layer Doping on the PL Spectrum Properties of In0.53Ga0.47As Materials in InP Base PIN Detector[J]. Infrared Technology , 2014, 36(5): 415-418.
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Citation:
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WU Bo, DENG Jun, YANG Li-peng, TIAN Ying, HAN Jun, LI Jian-jun, SHI Yan-li. The Influences of Contact Layer Doping on the PL Spectrum Properties of In0.53Ga0.47As Materials in InP Base PIN Detector[J]. Infrared Technology , 2014, 36(5): 415-418.
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WU Bo, DENG Jun, YANG Li-peng, TIAN Ying, HAN Jun, LI Jian-jun, SHI Yan-li. The Influences of Contact Layer Doping on the PL Spectrum Properties of In0.53Ga0.47As Materials in InP Base PIN Detector[J]. Infrared Technology , 2014, 36(5): 415-418.
|
Citation:
|
WU Bo, DENG Jun, YANG Li-peng, TIAN Ying, HAN Jun, LI Jian-jun, SHI Yan-li. The Influences of Contact Layer Doping on the PL Spectrum Properties of In0.53Ga0.47As Materials in InP Base PIN Detector[J]. Infrared Technology , 2014, 36(5): 415-418.
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