High Operation Temperature Non-equilibrium Photovoltaic HgCdTe Devices

In this paper, we review both domestic and foreign state-of-the-art high operation temperature (HOT) MCT infrared detector technologies and their corresponding device performance. Based on the analysis of the characteristics of dark current versus temperature, we summarize the working principles under the non-equilibrium operation mode, device structure design and the origin of the dark current. We also determined the relationship between the performance of the fully depleted absorber device, device structure parameters, and material quality. We also discuss the technical key points of the development of a non-equilibrium operation-mode HOT infrared photodetector. Further development HOT MCT infrared detector technologies is expected.