Effect of in-Situ Post-annealing on the Second Phase Inclusion Defects

Second-phase-inclusion defects in Bridgman-grown CdZnTe crystals were decreased via post-growth in-situ annealing combined with excess Cd in CdZnTe ingots. Based on the formation mechanism of the second-phase-inclusion defects in Bridgman-grown CdZnTe, the relationship between second-phase-inclusion defects and annealing temperature was studied. The size of second-phase-inclusion defects was reduced to less than 10 μm and their density to less than 250 cm^-2 in CdZnTe at an optimized in-situ post-annealing temperature.