ZHANG Jian-xin, LIU Jun-xing, LI Hong-wu. Radiation Effect of MOS Structure Irradiated by Electron[J]. Infrared Technology , 2008, 30(4): 234-237. DOI: 10.3969/j.issn.1001-8891.2008.04.013
Citation:
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ZHANG Jian-xin, LIU Jun-xing, LI Hong-wu. Radiation Effect of MOS Structure Irradiated by Electron[J]. Infrared Technology , 2008, 30(4): 234-237. DOI: 10.3969/j.issn.1001-8891.2008.04.013
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ZHANG Jian-xin, LIU Jun-xing, LI Hong-wu. Radiation Effect of MOS Structure Irradiated by Electron[J]. Infrared Technology , 2008, 30(4): 234-237. DOI: 10.3969/j.issn.1001-8891.2008.04.013
Citation:
|
ZHANG Jian-xin, LIU Jun-xing, LI Hong-wu. Radiation Effect of MOS Structure Irradiated by Electron[J]. Infrared Technology , 2008, 30(4): 234-237. DOI: 10.3969/j.issn.1001-8891.2008.04.013
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